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Microstructures and Critical Current Properties for YBCO Films Prepared by No-Additional-Water Annealing of Pre-Cursor Films Depoisted Y, BaF_2 and Cu

机译:由含有预载剂膜的无额外水退火制备的YBCO薄膜的微观结构和临界电流性能。y,baf_2和cu

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YBa_2Cu_3O_7–x (YBCO) Films are prepared on SrTiO_3 substrates by no-additional-water annealing of precursor films which are deposited at room temperature by a co-evaporation technique using Y, BaF_2 and Cu as evaporation sources. In the annealing process, we intentionally do not introduce water vapor to the reaction chamber. Previous results have indicated that the YBCO films obtained by the present annealing process grow epitaxially throughout the entire film thickness, as seen in cross-sectional transmission electron microscope (TEM) images. The YBCO films have a high critical current density (J_c) of approximately 5 MA/cm~2 at 77 K in a self-field. When magnetic fields are applied perpendicular to the film surface, the Jc decrease is relatively large in the magnetic fields less than 1 T, despite of an enough high magnetic field of glass-liquid transition, BGL, as revealed by the pinning analyses. These results indicate that crystal defects, where a magnetic flux moves easily in a magnetic field applied perpendicular to the film surface, possibly exist in the YBCO films. Moreover, some pinning centers perpendicular to the film surface appear to exist in the YBCO films, on the basis of the result of the angle dependence of magnetic fields on Jc. We investigate the microstructures from the viewpoint of crystal defects. We found that a-axis grains might play a role inJc reduction in low and medium magnetic fields and that the pinning center for magnetic fluxes penetrated perpendicular to the film surface.
机译:通过使用Y,BaF_2和Cu的共蒸发技术在室温下沉积的前体膜,在SRTIO_3底物上制备YBA_2CU_3O_7-X(YBCO)膜。通过使用Y,BAF_2和Cu作为蒸发来源,通过共蒸发技术在室温下沉积。在退火过程中,我们故意不会将水蒸气引入反应室。先前的结果表明,通过当前退火过程获得的YBCO膜在整个膜厚度上外延生长,如在横截面透射电子显微镜(TEM)图像中所见。 YBCO膜在自场的77k处具有大约5mA / cm〜2的高临界电流密度(J_C)。尽管磁场垂直于膜表面施加磁场,但磁场中的磁场中的玻璃液体转换的高磁场,BGL,如被钉纳分析所揭示的情况,JC减小在小于1T的磁场中相对较大。这些结果表明晶体缺陷,其中磁通量容易在垂直于膜表面施加的磁场中移动,可能存在于YBCO膜中。此外,基于JC上磁场的角度依赖性的结果,在YBCO膜中垂直于薄膜表面的一些钉扎中心似乎存在于YBCO膜中。从晶体缺陷的角度来看,我们研究了微观结构。我们发现,A轴晶粒可能在低中磁场中的角色突破,并且磁通垂直于膜表面的磁通量的钉扎中心。

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