NEGATIVE AND POSITIVE MAGNETORESISTIVITY BEHAVIOURS AT VERY LOW TEMPERATURES IN THE VARIABLE RANGE HOPPING REGIME IN INSULATING N-TYPE INP SEMICONDUCTOR

摘要

Experimental results are reported on field negative and positive magnetoresistivity in insulating n-type InP sample in which variable-range hopping occurs at low temperatures. Negative and positive magnetoresistivity associated with variable-range hopping conduction have been observed. Experimental data are tentatively compared with available theoretical models in the insulating regime. ?2008 American Institute of Physics