BASICS OF SPINTRONICS:FROM METALLIC TO ALL-SEMICONDUCTORMAGNETIC TUNNEL JUNCTIONS

摘要

This article provides an overview of the experimental and theoretical researchconcerning the tunneling magnetoresistance effect in metallic and novel all-semiconductor magnetic tunnel junctions. First, the experimental findings con-cerning various magnetic tunnel junctions are analyzed to extract physicalmechanisms governing the tunneling magnetoresistance effect, paying atten-tion to the material issues. Next, the simple qualitative models and quantita-tive theories of tunneling magnetoresistance are presented and illustrated byexamples of predictions they can provide.