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Close-from model of shunt capacitance and inductance of microstrip step discontinuities

机译:关闭 - 从分流电容模型和微带步长不连续的电感

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Some results for the inductance and capacitance associated with a step discontinuity in a microstrip are available. We present a model on the based on K.C. Gupta proposal for inductance having a maximum deviation 5% and average deviation 3% for ∈r =9.6 and compare the numerical calibration with de-embedding techniques used in the planar electromagnetic (EM) simulation (SONNET) for ∈r = 2.3, 4.0, 15.1, 20.0 & 40.0. These techniques are used to eliminate the port discontinuities brought by the current/voltage exciting source. The closed form model for step shunt capacitance having a maximum deviation 10% and average deviation 4.66% for 2.3 ≤ ∈, ≤ 40.0 against numerical results of the internal equation method. The models have average deviation 0.027 for the Cp and 0.015 for Ls against the results of Sonnet.
机译:有一些结果对于微带中的步步不连续性相关的电感和电容。我们在基于K.C上提出了一个模型。对于最大偏差5%的电感和平均偏差3%的GUPTA提案对于∈ R = 9.6,并比较使用平面电磁(EM)模拟(SONNET)中使用的去嵌入技术的数值校准∈ r = 2.3,4.0,15.1,20.0&40.0。这些技术用于消除电流/电压励磁源带来的端口不连续性。用于步进分流电容的封闭形式模型,其最大偏差10%和平均偏差为2.3≤ν,≤40.0,与内部等式方法的数值结果。对于L S 对SONNET的结果,该模型具有平均偏差0.027,用于L S 的0.015。

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