Exploring New Metrology for Complex Photomask Patterns

摘要

Photomask pattern sizes are usually defined by a one-dimensional Critical Dimension (CD). As mask pattern shapesbecome more complex, a single CD no longer provides sufficient information to characterize the mask feature. Forsimple square contacts, an area measurement is generally accepted as a better choice for determining contact uniformity.However, the area metric may not adequately characterize complex shapes; it does not lend itself to CD metrology and itignores pattern placement. This paper investigates new ways of measuring complex mask shapes with aggressive OpticalProximity Correction (OPC). An example of more informative metric is center of gravity. This new metric will becompared to more traditional mask characterization variables like CD mean to target, CD uniformity, and ImagePlacement (IP). Wafer simulations of the mask shapes will be used to understand which mask pattern metrics are mostrepresentative of the image transferred to wafer images. The results will be discussed in terms of their potential toimprove mask quality for 32nm technology and beyond.