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Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device
Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device
A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of ±n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the ±n-order diffracted light beams, defocus experienced by the feature pattern.
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