Study of influence to transistor characteristic on the change of OPC pattern

摘要

Slight change of OPC pattern shape may influence transistor characteristics. So inputting the result of Litho-Simulation, Contour, to SPICE-simulator, we investigated the change of the transistor characteristic. First of all, weinvestigated the sensitivity of the transistor characteristics to OPC pattern change. We found that the difference of shapewith Isolated, Dense pattern, and a different OPC tool caused difference after SPICE-simulation. In this investigation, wereport focusing on the transient and DC analysis of transistor characteristics. Contour data was measured and averagedbefore input to SPICE and a change of transistor characteristic was able to be detected. We came to the conclusion thatthis investigation method is effective to check the influence of the transistor characteristics due to OPC pattern change.And we can adopt this method as one technique for deciding the applicability of the OPC tool and its upgrade, whichwere issues for MASK data processing.