A New Paradigm for Haze Improvement:Retardation of Haze Occurrence by creating Mask Substrateinsensitive to Chemical Contamination Level

摘要

Haze issues are getting more serious since size of Haze defect printable on the water surface that could matter isdecreasing further with reduced pattern size. Many efforts have been made to reduce the contamination level on thephotomask surface by applying wet or dry processes. We have successfully reduced surface contamination down to sub-ppb level for organic and inorganic chemicals. No matter how well the mask surface is cleaned, chemical contaminantcannot be perfectly eliminated from the surface. As long as contaminants exist on the surface, they are getting aggregatedaround certain points with higher energy to create defects on it during laser exposure. Also, the cleaned mask surfacecould be contaminated again during following processes such as shipping and storage. Here, we propose a new paradigm for Haze retardation where we severely decelerate defect generation and growthrather than eliminate chemical contaminants on the mask surface. We have made mask surface on which chemicalcontaminants are hardly accumulated to generate Haze defects even during laser exposure. By creating mask surfaceinsensitive to chemical impurity level up to a certain degree, we are able to retard Haze occurrence much better than byreducing surface impurities down to sub-ppb level. This approach has another advantage of allowing a freedom for maskenvironment during the process of shipping, storage, and exposure. We further investigate how the treated mask surface should have strong resistance against chemical contaminantaggregation towards Haze defect generation around specific points with high energy.