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Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory with Rounded Corner (RC) Structure

机译：TANOS（TAN / ALO / SIN / SI）的可靠性特性NAND闪存，圆角（RC）结构

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Charge trap flash (CTF) memory is one of the most promising technologies for the next generation NAND technology. Among various CTF memories, excellent manufacturability of TaN-Al{sub}2O{sub}3-Si{sub}3N{sub}4-SiO{sub}2-Si (TANOS) structure has been successfully developed by achieving 32Gb MLC NAND flash using 40nm technology node [1].

机译：电荷陷阱闪存（CTF）内存是下一代NAND技术最有前途的技术之一。在各种CTF存储器中，通过实现32GB MLC NAND成功开发了TAN-AL {SUB} 2O {SUB} 3-SI {SUB} 3N {SUB} 4-SIO {SUB} 2-SI（TANOS）结构的优异可制造性。闪烁使用40nm技术节点[1]。

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《Non-Volatile Semiconductor Memory Workshop》|2008年||共2页
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Sung-Il Chang; Chang-Hyun Lee; Changseok Kang; Sanghun Jeon; Juhyung Kim; Byeong-In Choi; Youngwoo Park; Jintaek Park; Wonseok Jeong; Janghyun You; Bonghyun Choi; Jongsun Sel; Jae Sung Sim; Yoocheol Shin; Jungdal Choi; Won-Seong Lee;
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专利

1. TaN and $hbox{Al}_{2}hbox{O}_{3}$ Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells [J] . Beug M. F., Melde T., Paul J., Electron Devices, IEEE Transactions on . 2011,第6期

机译：TaN和$ hbox {Al} _ {2} hbox {O} _ {3} $侧壁栅刻蚀损坏对50nm以下TANOS nand闪存单元的编程，擦除和保留的影响
2. Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories [J] . Daewoong Kang, Sungnam Jang, Kyongjoo Lee, Japanese journal of applied physics . 2008,第4issue2期

机译：在4 GB NAND闪存中使用有源边缘的SiN衬垫改善单元特性
3. Effect of field oxide structure on endurance characteristics of NAND flash memory [J] . Kim K., Yoon J., Kim Y., Electronics Letters . 2014,第10期

机译：场氧化物结构对NAND闪存耐久特性的影响
4. Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory with Rounded Corner (RC) Structure [C] . Sung-Il Chang, Chang-Hyun Lee, Changseok Kang, Non-Volatile Semiconductor Memory Workshop . 2008

机译：TANOS（TAN / ALO / SIN / SI）的可靠性特性NAND闪存，圆角（RC）结构
5. NAND flash memory: Characterization, analysis, modelling, and mechanisms [D] . Cai, Yu 2012

机译：NAND闪存：表征，分析，建模和机制
6. CMOS-compatible ferroelectric NAND flash memory for high-density low-power and high-speed three-dimensional memory [O] . Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee 2021

机译：CMOS兼容的铁电NAND闪存用于高密度低功耗和高速三维内存
7. A reliability enhanced address mapping strategy for three-dimensional (3-D) NAND flash memory [O] . Wang Y, Shao ZL, Chan HCB, 2014

机译：三维（3-D）NAND闪存的可靠性增强型地址映射策略

Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory with Rounded Corner (RC) Structure

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