Simultaneous lasing at ground and excited states in InAs/GaAs quantum dot laser diodes due to inhomogeneous broadening

摘要

Summary form only given. We have investigated the microscopic mechanism of the double-state lasing (simultaneous lasing at the ground and excited states) behavior observed in InAs/GaAs quantum dot (QD) laser diodes (LDs). Spontaneous emission is measured from a window structure on top of QD LDs, as well as amplified spontaneous emission from a facet. Experimental results are analyzed with the simulation results based on a coupled rate equation model of photon dynamics and carrier dynamics applied to the QD microstates. Excited state lasing is found to arise not from the QD group undergoing ground state lasing, but rather from another QD group.