Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

摘要

In this work, we report the structural and electrical properties of InAs/GaSb type-II superlattices (T2SLs) with a cutoff wavelength of 6μm-band grown by metalorganic vapor phase epitaxy (MOVPE), which is advantageous for mass production compared with molecular beam epitaxy (MBE). 200-period InAs/GaSb T2SLs demonstrated an intense photoluminescence peak centered at 6.6μm at 4K and dark current density of 1.7E-5A/cm2 at 77K, -20mV. These results indicate that MOVPE has possibility to fabricate InAs/GaSb T2SLs which have excellent structural and electrical properties for producing high-performance MWIR detectors.