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Defect modes around low-lying phonon in Ag β-Alumina by Raman scattering with high resolution

机译:通过高分辨率拉曼散射在Agβ-氧化铝中缺陷模式

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Raman spectra for low-lying phonons of Ag β-alumina were measured in the temperature range of 30 K-280 K. The broad band of the low-lying phonon was found to contain three Lorentz bands by a double monochrometer with high resolution (ΔE=1 cm-1). Well resolved three bands correspond to the previous Raman results observed from the isomorphous β-alumina of K, Tl or Rb. The decomposed low-lying phonon of Ag β-alumina shows that the band width broadens with an increase in temperature clearly. The damping energy obtained from the Raman line-width of the low-lying phonon was estimated to be 0.51 meV at 30 K. It is in excellent agreement with the value 0.55 meV at 30 K from the femtosecond time-resolved observation.
机译:在30k-280k的温度范围内测量用于低位β-氧化铝的低位声子弹的拉曼光谱。发现低洼声子的宽带通过具有高分辨率的双单色计(ΔE)含有三个洛伦兹带(ΔE) = 1cm-1)。良好的三个带对应于从K,TL或Rb的同晶β-氧化铝观察到的先前拉曼结果。 Agβ-氧化铝的分解低位声子表明,带宽随着温度的增加而变宽。从低洼声子的拉曼线宽获得的阻尼能量估计为0.51meV,30 k。它与来自飞秒时间分辨观察的30 k的值为0.55 mev非常一致。

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