首页> 外文会议>International Conference on Electronics, Circuits and Systems >A Micropower Low-Dropout Regulator with a Programmable On-Chip Load Capacitor for a Low-Power Capacitive Sensor Interface
【24h】

A Micropower Low-Dropout Regulator with a Programmable On-Chip Load Capacitor for a Low-Power Capacitive Sensor Interface

机译:微功率低压丢弃调节器,可编程片上载荷电容器,用于低功耗电容式传感器接口

获取原文

摘要

In this paper, a micropower low-dropout regulator (LDO) for a low-power capacitive sensor interface fabricated in a 0.25μm BiCMOS process is presented. The LDO with on-chip voltage and current references, and an on-chip programmable load capacitor, occupies an active silicon area of 0.18 mm~2. It is stable with zero load current over the load capacitance range from 0 to 1 nF. The input voltage range extends from 1.2 to 2.75 V, while the designed output voltage is 1.0 V. The measured quiescent current of the LDO including the on-chip references is 7.6μA. According to the measurements, the regulated output has a temperature coefficient (TC) of 57.2 ppm/°C, a line regulation of 2.71 mV/V, and a load regulation of 1.64 mV/mA. The rms output noise integrated over the bandwidth ranging from 1 Hz to 100 kHz is 1.365 mV.
机译:本文提出了一种在0.25μmBICMOS工艺中制造的低功率电容传感器界面的微功率低压丢弃调节器(LDO)。具有片上电压和电流参考的LDO和片上可编程负载电容器,占用0.18mm〜2的有源硅面积。它稳定,零负载电流超过0到1 NF。输入电压范围从1.2到2.75 V延伸,而设计的输出电压为1.0 V.包括片上参考的LDO的测量静态电流为7.6μA。根据测量值,调节的输出具有57.2ppm /°C的温度系数(Tc),线调节为2.71mV / v,负荷调节为1.64 mV / mA。集成在带宽范围内的RMS输出噪声范围为1 Hz至100 kHz为1.365 mV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号