Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

摘要

Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28～20 MeV protons on homemade GaAs/Ge solar cells.The NIEL for each ion is modified by taking into account the distribution of Bragg damage peak in the active region of the solar cells,and then the corresponding displacement damage dose is obtained.It is found that with the aid of displacement damage dose,the degradation of Pmax of GaAs/Ge solar cells induced by carbon ions and protons with various energies and fluences could be characterized with a simple curve.Obviously,the displacement damage dose approach simplifies the description of ion irradiation effects on homemade GaAs/Ge solar cells.