Using mechanical alloying (MA), Zr and Y were incorporated into the BaTiO_3 lattice to produce doped BaTiO_3 powder. In this solid solutions the Ti~(4+) ion is substituted by the Zr~(4+) ion in the crystalline lattice (isovalent doping), and the Ba~(2+) ion is replaced for the Y~(3+) ion (aliovalent doping). These powders were pressed and sintered to obtain polycrystalline bulky devices which were analised by impedance spectroscopy. In case of Zr doping, MA samples showed lower dielectric loss and higher resistivities than the conventional samples. When Y doped BaTiO_3 is prepared by MA the samples show semiconductive behaviour at lower concentrations as compared to conventional samples.
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