Structure and luminescence properties of Tb~(3+)-doped Lu_3Al_5O_(12) filmsprepared by Pechini sol-gel method

摘要

Tb~(3+)-doped Lu_3A1_5O_(12) (hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb~(3+) characteristic emission bands.