Fabrication, structure and luminescence properties of polycrystalline Tb~(3+)-doped Lu_2SiO_5 films by Pechini sol-gel method

摘要

Tb~(3+)-doped lutetium oxyorthosilicate (Tb:Lu2SiO_5, LSO) films have been successfully fabricated on carefully cleaned silicon (111) substrates by Pechini sol-gel method combined with the spin-coating technique. X-ray diffraction (XRD), photoluminescence (PL) spectra and atomic force microscopy (AFM) were employed to characterize the resultant films. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000℃, followed by a phase transition from A-type LSO to B-type LSO occurred at 1100 ℃. The AFM observation revealed that the phosphor films were uniform and crack-free, consisting of closely packed grains with an average size of 200-300 nm. The PL spectra showed the characteristic emission ~5D4 →~7F_J (J = 3-6) forTb~(3+),The lifetime of Tb~(3+) in Tb:LSO films was 2.33 ms. The effect of heat-treatment temperature on the luminescent properties was also investigated.