Preparation of Polycrystalline HgI_2 Films by PVD method under Ultrasonic Wave

摘要

Highly oriented polycrystalline α-HgI_2 thick films are fabricated by physical vapor deposition method under the conditions of 59KHz ultrasonic wave and relatively lower source temperature of 80°C. The ultrasonic wave is used in the process of physical vapor deposition films preparation for the first time. With the effect of ultrasonic wave, the film quality and the growth rate can be obviously improved. The growth mechanism as well as impacts of ultrasonic wave is also discussed.