Surface morphology of (100) ZnTe: P layer homoepitaxially grown by horizontal MOVPE technique

摘要

The surface morphology and roughness of (100) P-doped ZnTe homoepitaxial layers grown by horizontal MOVPE using tris-dimethylaminophosphorus have been investigated as a function of substrate temperature under two different source transport rate conditions together with the photoluminescence property. The surface is marked by a dense ridging when the growth is limited by reaction-kinetics on the grown surface, whereas the surfaces of the layers grown in the mass-transport limited regime show morphology consisted of a series of hillocks, independent of the transport rate. The growth condition close to the transition part between the mass-transport and the surface-kinetics regimes provide an optimum growth not only for achieving a minimum surface roughness, but also for a better photoluminescence property of the as-grown P-doped ZnTe layer.