A Methyl BN Film by using Tris-di-methyl-amino-boron (TMAB) for Future Low-K Interlayer

摘要

A silicon-oxide-based porous methyl material such as a porous SiOCH has been investigated as a Low-K film for post 45nm node generation. However, low young modulus of porous Low-K films is serious issues in Cu/Low-K interconnection. We have investigated Low-K material of Boron Nitride containing methyl (Methyl Boron Nitride) by using Tris-di-methyl-amino-boron (TMAB) gas. This paper reports on properties of a Methyl BN film by TMAB. We have succeeded in Low-K material (K value:2.2) with Young modulus >26GPa.