A Power Efficient Wide Band Trans-Impedance Amplifier in sub-micron CMOS Integrated Circuit Technology

摘要

This article proposes a simple trans-impedance amplifier (TIA) using a given (i.e. 0.18 micron CMOS) VLSI technological process. The TIA offers a very wide band-width of operation with very small power consumption. Compared with several TIA reported in the past, our TIA is more competitive when band-width (more than 4GHz) versus power consumption (less than 3.5mW) criterion is used as a metric for the merit of the structure. Analytical optimization of the terminal characteristics of the TIA are presented. Results of simulation are reported, together with a comparison with TIA structures reported in the recent past.