A New Physics-Based Compact Model for Bilayer Graphene Field-Effect Transistors

摘要

In this paper, a new compact model for Dual-Gate Bilayer Graphene Field-Effect Transistors is presented. The model uses a physics-based density of states (DOS) to compute the current and the charge. Moreover, the effect of back-gate biasing on the flatband voltage, residual carrier density and access resistances is implemented in the model for accurate description of the drain current. The developed large-signal compact model has been implemented in Verilog-A and its accuracy has been evaluated by comparison with measurements from the literature.