Improvement of orientation and characterization of dielectric property for (Y,Yb)MnO{sub}3/HfO{sub}2/Si structures

摘要

Y{sub}0.5Yb{sub}0.5MnO{sub}3 ferroelectrics/HfO{sub}2 stacking layers were successfully constructed on Si(100) substrates through the chemical solution deposition. The degree of c-axis orientation and microstructure of Y{sub}0.5Yb{sub}0.5MnO{sub}3 ferroelectrics was improved by the control of concentration of precursor solutions. Capacitance of Pt/Y{sub}0.5Yb{sub}0.5MnO{sub}3/HfO{sub}2/Si structure was almost constant over 10{sup}4 s on the retention property.