首页> 外文会议>ELectronics Division Meeting of the Ceramic Society of Japan >Structure and Electric Property of BaTi{sub}2O{sub}5 Film by Laser Ablation
【24h】

Structure and Electric Property of BaTi{sub}2O{sub}5 Film by Laser Ablation

机译:BTI {Sub} 2O {Sub} 5薄膜的结构和电特性

获取原文

摘要

BaTi{sub}2O{sub}5 film was prepared on MgO (100) substrate by laser ablation, and the structure and electric property of the film were investigated. The film was b-axis oriented and epitaxially grown on the substrate along two in-plane directions with the a-axes ([100]-orientation) perpendicular to each other. The b-axis oriented BaTi{sub}2O{sub}5 film exhibited a sharp permittivity maximum (~2000) and had a high Curie temperature (750 K). The electrical conductivity increased with temperature and showed the Arrhenius relationship having an activation energy of 1.25 eV.
机译:通过激光消融在MgO(100)衬底上制备Bati {Sub} 2O {Sub} 5膜,并研究了膜的结构和电性。薄膜沿着两个面内方向在基板上沿两个面内方向沿着彼此垂直于轴轴([100] - [100] - 轴),薄膜沿着两个面内方向上延伸。面向B轴的BATI {SUB} 2O {SUB} 5膜表现出最大的漏洞最大值(〜2000)并具有高居里温度(750 k)。电导率随温度的增加,并且显示了具有1.25eV的激活能量的Arrhenius关系。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号