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On mismatch number distribution of nanocrossbar logic mapping

机译:关于纳米杆逻辑映射的不匹配号分布

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Crossbar-based architectures are promising for the future nanoelectronic systems. Due to the inherent unreliability of nanotechnology, logic mapping onto highly defective crossbars needs to be performed on every chip. This posts significant challenge as the mapping problem is NP-complete. The complexity of the defect-tolerant logic mapping problems makes it hard to analyze runtime and model yield. This paper presents a new metric for evaluating the quality of the defect-tolerant logic mapping by tagging each mapping trial with a “score”, namely the mismatch number. Specifically, we look into the mismatch number distribution over: 1) crossbars having the same defect rate, 2) crossbars having the same defect number, and 3) a single crossbar with a given defect pattern. We show that the number of mismatches can be well modeled in probabilistic approaches, and the mismatch number distribution follows Normal/Poisson and Hypergeometric distribution, respectively. This new metric serves as the basis of performing runtime and yield analysis, which are difficult to estimate for logic mapping onto nanocrossbars. More importantly, the quantitative score for each underlying mapping trial serves as the basis in building the reliable nanocrossbar systems.
机译:基于横杆的架构对于未来的纳米电子系统是有希望的。由于纳米技术的固有不可靠性,需要对每个芯片进行高度有缺陷的跨界的逻辑映射。这张贴了重大挑战,因为映射问题是NP完整的。缺陷宽容逻辑映射问题的复杂性使得难以分析运行时和模型产量。本文介绍了通过用“得分”标记每个映射试验来评估缺陷宽容逻辑映射的质量的新度量标准,即“得分”,即不匹配号。具体地,我们研究了具有相同缺陷率的不匹配号分布,2)具有相同缺陷号的横磁谱,以及3)具有给定缺陷图案的单个横杆。我们表明,不匹配的数量可以很好地以概率方法建模,并且分别遵循正常/泊松和超高度分布。这种新的度量作为执行运行时和产量分析的基础,这很难估计逻辑映射到Nanocrossbars上。更重要的是,每个底层映射试验的定量分数是构建可靠的纳诺杆系统的基础。

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