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An EBSD study on mapping of small orientation differences in lattice mismatched heterostructures.

机译:EBSD研究晶格失配异质结构中小的取向差异。

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摘要

Electron back scatter diffraction (EBSD) on a Scanning Electron Microscope (SEM) has experienced rapid development in recent years. However, inadequate attention has been paid to the details of the method. Many of the algorithms in current use were chosen because they were the first ones that were found to work, not because they were optimum. The long term aim of this study is mainly concerned with extending EBSD to characterizing threading dislocations in semiconductor materials. In working toward this objective, a systematic study on the EBSD technique was performed.; The possibility of measuring small changes of orientation within grains by EBSD was explored. Conventional orientation maps (using EBSD) index the orientation of each position on the sample separately. This does not give accurate results for small differences of orientation. Therefore, methods of directly measuring small changes in orientation from one EBSD pattern to the others were examined. Previous workers have measured the change of position of zone axes in the EBSD pattern. A comparison between measuring changes of position of zone axes versus measuring the shift of the peaks in the Hough transform from one diffraction pattern to the next suggests that the latter method is superior. More over, it is possible, with a standard EBSD configuration, to measure the shift of the Kikuchi bands to a precision of about 0.1 pixels, which corresponds to a change of orientation of about 0.1 mrad.{09}This method has been successfully applied on a GaN/Sapphire structure. Based on this method, ways to perform high precision orientation mapping are proposed.; We have also shown that: (1) More than one method can successfully correct a sampling artifact, which is associated with the Hough transform; (2) There is an optimum binning ratio; (3) Gaussian filtering provides an alternative to “butterfly convolution”; (4) Better alternatives for mapping image quality than those in current use are available; (5) saving all the original patterns is practical and advantageous; and (6) Conventional usage of Monte-Carlo simulation for estimating the interaction volume of EBSD is flawed.
机译:近年来,在扫描电子显微镜(SEM)上的电子背散射衍射(EBSD)经历了飞速发展。但是,对这种方法的细节没有给予足够的重视。选择当前使用的许多算法是因为它们是最早被发现起作用的算法,而不是因为它们是最优的。这项研究的长期目标主要是将EBSD扩展到表征半导体材料中的螺纹位错。为了实现这一目标,对EBSD技术进行了系统的研究。探索了通过EBSD测量晶粒内取向的细微变化的可能性。常规方向图(使用EBSD)分别索引样品上每个位置的方向。对于较小的方向差异,这不会给出准确的结果。因此,研究了直接测量从一种EBSD模式到另一种EBSD模式的方向微小变化的方法。以前的工人已经测量了EBSD模式中区域轴的位置变化。在测量区域轴的位置变化与测量霍夫变换中从一个衍射图样到另一个衍射图样的峰偏移之间的比较表明,后一种方法更好。而且,使用标准的EBSD配置,可以测量菊池波段的位移到约0.1像素的精度,这相当于约0.1 mrad的方向变化。{09}该方法已成功应用在GaN /蓝宝石结构上。基于这种方法,提出了进行高精度方位映射的方法。我们还表明:(1)多种方法可以成功校正与Hough变换相关的采样伪像; (2)有一个最佳的装箱比例; (3)高斯滤波提供了“蝴蝶卷积”的替代方法; (4)有比当前使用的更好的映射图像质量的替代方法; (5)保存所有原始图案既实用又有利; (6)传统上使用蒙特卡罗模拟来估计EBSD的交互量是有缺陷的。

著录项

  • 作者

    Tao, Xiaodong.;

  • 作者单位

    Lehigh University.;

  • 授予单位 Lehigh University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 196 p.
  • 总页数 196
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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