Various compositions of CaCu3+xTi4+yO12 ceramics based on the cation stoichiometry (x = −0.06, 0, +0.06; y = −0.08, 0, +0.08) were prepared via conventional solid state method. From the XRD data, CuO phases were found on the surface layers of all non-stoichiometric CCTOs. On the other hand, Cu2O phase was detected on the inner layers of Cu- and Ti-excessive CCTO which yielded low values of the dielectric constant (K). The Cu- and Ti-deficient CCTO showed the improvement of both K and tan δ, which can be explained by the lower grain resistivities compared to stoichiometric CCTO by the impedance spectroscopy. Further results from the cooling rate control and different sintering conditions of the stoichiometric CCTO are discussed in terms of the relationship between phase equilibria of CuO and Cu2O and the dielectric properties.
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机译:CACU 3 + X / INF> TI 4 + Y INF> O 12 INF>陶瓷的陶瓷基于阳离子化学计量(X = -0.06,0,+0.06 ; y = -0.08,0,+ 0.08)通过常规固态方法制备。从XRD数据中,CuO相在所有非化学计量级联的表面层上发现。另一方面,在Cu-和Ti过量CCTO的内层上检测Cu2O相,其产生介电常数(K)的低值。 Co-和Ti缺陷的CCTO显示了K和TANδ的改善,其可以通过阻抗光谱与化学计量的CCTO相比,通过较低晶粒电阻来解释。通过CuO和Cu 2 INF> O和电介质性质的相平衡与电介质之间的关系,进一步讨论了化学计量控制的冷却速率控制和不同烧结条件。
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