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Development of Multilayered SrTiO_(3) Thin-Film Capacitors For Embedded Passive Applications

机译:用于嵌入式无源应用的多层SRTIO_(3)薄膜电容的开发

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Multilayered thin-film capacitors (MLTFC) with SrTiO_(3) (STO) dielectric and Pt electrode thin layers were fabricated on polycrystalline alumina substrates, in which amorphous STO dielectric thin layers with thicknesses of 100-300nm were formed using a cost-effective aerosol chemical vapor deposition (ASCVD) method. The MLTFC with up to ten-layer dielectric layers and total thickness of 0.2-0.25 mm, reached capacitance densities of 100-900 nF/cm~(2). Further increase in capacitance density of the MLTFC was tried by reduction in thickness and crystallization of STO dielectric thin layers. Three forms of MLTFC (chips, sheets and substrates) are being developed for embedded passive applications.
机译:用SRTIO_(3)(STO)电介质和PT电极薄层的多层薄膜电容器(MLTFC)在多晶氧化铝基材上制造,其中使用具有成本效益的气溶胶形成厚度为100-300nm的非晶STO介电薄层化学气相沉积(ASCVD)方法。具有高达十层介电层的MLTFC和0.2-0.25mm的总厚度,达到100-900nf / cm〜(2)的电容密度。通过降低STO介电薄层的厚度和结晶来尝试MLTFC的电容密度的进一步增加。为嵌入式被动应用开发了三种形式的MLTFC(芯片,片材和基板)。

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