The polarization dependence for the electronic structure of Bi4Ti3O12 (BIT) single crystal has been studied by soft-X-ray emission spectroscopy (SXES) and X-ray absorption spectroscopy. The valence band and conduction band are mainly composed of O 2p state and Ti 3d state, respectively. The SXES spectra measured at the Ti 2p absorption edge region exhibit three structures, which correspond to elastic scattering, fluorescence and soft-X-ray Raman scattering. The Raman scattering corresponds to the charge-transfer (CT) energy, which corresponds to the transition from O 2p state to unoccupied Ti 3d state. The CT energy in the a-c plane is different from that in the a-b plane. The difference of CT energy originates to the lattice constant and hybridization effect in BIT single crystal.
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机译：通过软X射线发射研究了Bi 4 TI Ti O 12 （位）单晶的偏振依赖性光谱学（SXES）和X射线吸收光谱。价带和导通带分别主要由O 2P状态和TI 3D状态组成。在Ti 2P吸收边缘区域测量的SXES光谱表现出三种结构，其对应于弹性散射，荧光和软X射线拉曼散射。拉曼散射对应于电荷转移（CT）能量，其对应于从O 2P状态到未占用的TI 3D状态的转换。 A-C平面中的CT能量与A-B平面中的CT能量不同。 CT能量的差异来自位单晶中的晶格常数和杂交效果。
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