Characteristic Comparison of Epitaxial PZT and PMN-PT Films Grown On (100){sub}cSrRuO{sub}3//(100)SrTiO{sub}3 Substrates By Metalorganic Chemical Vapor Deposition

摘要

Epitaxial Pb(Zr{sub}(1-x)Ti{sub}x)O{sub}3 [PZT] and (1-x)Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3-xPbTiO{sub}3 [PMN-PT] films, above 2 μmin thickness, were grown on (100){sub}cSrRuO{sub}3//(100)SrTiO{sub}3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO{sub}3 content (x) dependencies of the crystal structure and piezoelectric properties were systematically investigated for these films. The longitudinal electric-field-induced strain Δx{sub}33 and transverse piezoelectric coefficient e{sub}(31,f) for PZT films were also maximum at the almost center mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of Δx{sub}33 was observed under applied electric fields up to 100 kV/cm, while larger e{sub}(31,f) was observed in PMN-PT films compared with the case of PZT films. e{sub}(31,f) coefficients of ～ -8.9 C/m{sup}2 and ～ -11.0 C/m{sup}2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.