To address the challenges of solid-state white lighting we have developed two designated metal-organic vapor phase epitaxy (MOVPE) mass production systems, the CRIUS庐 close-coupled showerhead (CCS) and AIX 2800G4 HT Planetary Reactor庐 tools with capacities of 30脳2 inch and 42脳2 inch, respectively. Uniformity over all wafers in a run of layers emitting in the blue spectral range was below 1 nm standard deviation on wafer and 卤0.85 nm from wafer to wafer. Previous work on silicon (Si) and lithium aluminate (LiAlO2) in an R&D reactor have shown the capability of these substrates for the GaN-based epitaxy and their impact for the mass production. Si is a low cost substrate and can be seen as an alternative to sapphire and silicon carbide (SiC). LiAlO2 offers the possibility for the growth of m-plane GaN. These layers are free of polarization fields in growth directions.
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