Sidewall smoothing of Si/SiO2 waveguide by excimer laser reformation

摘要

Smoothing as-etched Si/SiO2 waveguides by laser illumination results in less damage than furnace-treated one and atomic-force-microscopy measurement on the reformed surface gives root-mean-square roughness of 0.24 nm and leads to 0.04 dB/cm of calculated scattering loss.