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Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells

机译：基于诸如普拉的Ingan / GaN量子孔的无磷白光发光二极管

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A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.

机译：引入了一种普拉的MOCVD生长技术，以增强InGaN / GaN量子孔的铟掺入，以有效地发射黄色光光，使得可以在不使用磷光体的情况下制造白光发光二极管。

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《International Nano-Optoelectronics Workshop 》|2007年||共2页
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Lu Chih-Feng; Huang Chi-Feng; Yeh Dong-Ming; Chen Yung-Sheng; Shiao Wen-Yu; Yang C. C.;
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专利

1. Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells [J] . Chi-Feng Huang, Chih-Feng Lu, Tsung-Yi Tang, Applied Physics Letters . 2007 ,第15期

机译：InGaN / GaN量子阱的预应变生长与载流子密度有关的光谱的无磷白光发光二极管
2. InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes [J] . G.F. Yang, Q. Zhang, J. Wang, Reviews in Physics . 2016 ,第3期

机译：选择性生长的GaN微面上的InGaN / GaN多量子阱及其在无磷白光发光二极管中的应用
3. Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure [J] . Chen H.-S., Lu C.-F., Yeh D.-M., IEEE Photonics Technology Letters . 2006 ,第期

机译：基于预应力InGaN-GaN量子阱外延结构的橙红色发光二极管
4. Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells [C] . Lu, Chih-Feng, Huang, . 2007

机译：基于预应变InGaN / GaN量子阱的无磷白光发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes [O] . G.F. Yang, Q. Zhang, J. Wang, 2016

机译：选择性生长的GaN微平面上的InGaN / GaN多量子阱以及无荧光白光发光二极管的应用
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells

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