Self-forming silicide/SiGe-based tube structure on Si(001) substrates

摘要

Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to threedimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic silicide (NiSi2) may find applications in advanced devices.