Micro-characterisation of Si wafers by high-pressure thermopower technique

摘要

In the present work a set of Czochralski-grown silicon wafers (Cz-Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20 GPa). The shifts were observed in pressure of semiconductor-metal phase transition P_t determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen c_O (which is always present in Cz-Si) on the other hand. The dependence exhibited a maximum of P_t near c_O～9 x 10~(17) cm~(-3).