NUMERICAL SIMULATION OF THE FEEDING PROCESS, FLOW FIELD AND SOLUTE SEGREGATION IN EDGE-DEFINED FILM FED GROWTH OF PHOTOVOLTAIC SILICON

摘要

The aim of the work outlined in this paper is to clarify the effect of hydrodynamics and mass transport on the generation of SiC precipitates in shaped silicon crystals grown by the EFG-method (Edge-defined Film-fed Growth). Therefore we have set-up a global model for the melt flow and the carbon transport in melt pool, melt channel, and meniscus. The fluid dynamics are incorporated into the thermal model of the complete EFG environment including the inductive heating and the Ar gas flow. Buoyancy, Marangoni effect and Lorenz force due to the alternating field of inductors are taken into account for the melt flow. The melt flow is computed using an axis-symmetric, laminar, transient model.