THE INFLUENCE OF THE n-TYPE SEMICONDUCTOR LAYER ON THE PHOTOVOLTAIC RESPONSE IN THE 3D SOLAR CELLS WITH Cu_xS AS p-TYPE ABSORBER

摘要

Nowadays the solid state solar cells (SSSC) represent promising low-cost and efficient alternatives to the silicon based photovoltaic cells. The fundamental research in the SSSC field is mainly based on the thoroughgoing studies regarding the correlation between the properties (tailored by deposition parameters) of cell components (thin films) and the solar cell output (photovoltaic response). The paper presents the development of new 3D solid state solar cells, based on anatase and ZnO hetero-junction with Cu_xS (x = 1.8-1.96), with and without In_2S_3 buffer layer. The buffer layer does not improve the cells electrical properties, due to the CuInS_2 formation to the Cu_xS/In_2S_3 interface. The use of ZnO as n-type semiconductor layer is limited by the particular, worm like morphology, which is not match with the Cu_xS layer morphology. Good results are reported for cells based on TiO_2 anatase as n-type semiconductor, with dense-nanoporous morphology.