A NEW KOH-ETCH SOLUTION TO PRODUCE A RANDOM PYRAMID TEXTURE ON MONOCRYSTALLINE SILICON AT ELEVATED PROCESS TEMPERATURES AND SHORTENED PROCESS TIMES

摘要

Texturization of monocrystalline silicon for solar cells is still an issue due to the properties of the isopropyl alcohol (IPA) in the standard Potassium Hydroxide KOH (or Sodium Hydroxide NaOH)-IPA etching solution. The low boiling point of IPA (82.4°C) is limiting etch temperature and by this processing speed. Furthermore, IPA has other disadvantages like waste recycling problems. A better alternative for IPA, not only regarding processing time, is a High Boiling Alcohol (HBA). In this paper we show, that our newly found KOH-HBA texture also gives lower reflection results than our KOH-IPA texture. Finally, we produced solar cells with both textures and current-voltage measurements are compared.