INLINE PLASMA CLEAN PROCESSES PRIOR TO THE DEPOSITION OF DIELECTRIC ANTIREFLECTIVE AND PASSIVATION LAYERS ON CRYSTALLINE SILICON SOLAR CELLS

摘要

In standard solar cell fabrication the quality of the SiN_3:H passivation and anti reflective coating (ARC) layer has an important impact on solar cell efficiency. The functionality of the passivation layer strongly depends on the purity of the interface between the emitter surface and the SiN_3:H passivation layer. To avoid undesired charge recombination and thus a decreasing of the cell efficiency, a surface cleaning technology applicable for inline solar cell fabrication will be presented. Depending on the amount of impurities on the emitter surface a gain in solar cell efficiency of up to 0.4% was achieved by inline plasma pre processing before PE CVD Silicon nitride deposition. Both, plasma cleaning and SiN_3:H deposition were performed in a Roth & Rau MAiA inline tool.