High Voltage CMOS Line-up for Display Driver Applications based on 0.13μm CMOS with Aluminum metallization Scheme

摘要

The present paper describes the development of high voltage CMOS process line-up (5/11/20/30V) for display driver applications, based on 0.13μm CMOS process with aluminum metallization. The advantages are smaller size of SRAM bit cell and lower process cost. High voltage CMOS devices, 1.5V(LV) logic CMOS, 5.5V(MV)CMOS, poly-Si resistor (HR/MR), MOS-capacitor, SRAM and OTP are available. 10.8μm device pitch of 30V CMOS and good electric characteristics were successfully achieved. Thanks to the low cost and wide voltage options, various kind of display driver lCs can now be realized in smaller die size and lower cost.