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Subpicosecond Time-Resolved Photoluminescence of Carrier Transfer in AlGaN Using Difference-Frequency Generation

机译:使用差异频率生成,在AlGaN中的载波转移的亚磷二秒分辨的光致发光

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摘要

Ultraviolet photoluminescence from AlxGa1-xN epilayers exhibiting strong carrier localization is time-resolved with system response down to 300 fs using optical gating by frequency downconversion in a nonlinear crystal.
机译:来自AlxGa1-XN的紫外光致发光,其表现出强载体定位的AlxGa1-XN外膜函数与系统响应在非线性晶体中的频率下变频器下降到300 fs的系统响应。

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