LOW THERMAL BUDGET ACTIVATION OF B IN Si

摘要

Advanced devices may today require implantation and annealing steps after the metallic interconnection realization. Depending on the application, a thin p-doped layer has to be formed after wafer bonding. The issue, in such a case, is to correctly anneal the Boron implanted layer without degrading the buried devices and interconnections which lies at a depth around 3μm below the surface. Here, we propose to study different way to anneal this thin p-doped layer. Low energy and low dose implantations are performed without reaching the amorphisation threshold. Long thermal annealing at 400°C (RTP) and UV laser annealing are investigated through sheet resistance, thermal wave, SIMS or TEM. On one hand, a significant activation is obtained with RTP at temperature as low as 400°C and that Boron is activated with a better activation rate with B{sup}+ than with (BF{sub}2){sup}+. On the other hand, we achieve a much better activation with laser annealing as compared to RTP regardless of the implantation conditions.