Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni{sub}3Si{sub}2 was found to be the first silicide formed at 600°C and stable up to 900°C. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiO{sub}x overlayer on the surface during rapid solidification.
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