Influence of metal contamination in the measurement of p-type Cz silicon wafer lifetime and impact on the oxide growth

摘要

In this work, the possible detrimental impact of various metallic contaminants in advanced IC manufacturing was evaluated. Selected metals are the ones introduced by or related to new materials. Simple physical and electrical analyses were used to characterize the dangerousness of contaminants: oxide growth by ellipsometry, segregation behaviour by VPD-ICPMS and silicon lifetime by μ-PCD. We have classified elements in three categories: those which stay in the oxide and do not diffuse in the silicon, those which form precipitates with the silicon, and those which remain dissolved in silicon impacting minority carrier lifetime.