Alternative high-k materials are being researched as a replacement for SiON. At present HfSiON is the most popular material because of good transistor performance. Still, issues such as threshold voltage control and a limited k-value improvement encourage continuing material screening. In this paper, we give a short overview of some of the work done in this field, focusing on Dy{sub}xSc{sub}(2-x)O{sub}3 as potential candidate. In addition, we discuss the use of aqueous chemical solution deposition as potential technique to facilitate high-k screening.
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