Crystal growth and its large-capacity storage properties for Sc:Ce:Cu:LiNbO_3

摘要

A series of Sc:Ce:Cu: LiNbO_3 crystals with various level of Sc doping were prepared using the Cz equipment with a resistance furnace. The crystal storage properties with optical damage resistance ability, sensitivity and dynamic range were measured by means of two-beam coupling light path. The defect structure is also discussed, accounting for the optical damage resistance. Based on optimal one of these crystals as storage medium, one thousand of holograms were recorded in a public coherent volume of 0.082 cm~3. The result shows that storage density arrives10 Gbits/cm~3 and the crystal has potential application in the future high density storage.