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Magnetic memories: Memory hierarchy and processing perspectives (invited)

机译:磁存储器:内存层次结构和处理透视(邀请)

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A variety of magnetic memory devices, including MRAM, spin-torque RAM, plated wire, and bubbles, either are or have been under investigation as candidate "universal memory" devices. Such devices would combine the performance attributes of DRAM with the nonvolatility of a disk drive. This paper examines the past and present magnetic memories from two perspectives: (1) processing and extendability to smaller dimensions, and (2) the memory hierarchy of the applications to which they are directed. From a processing requirement, magnetic memories must converge to the cell sizes of competitive memory technologies, which range from 8F~2 for DRAM to 0.5F~2 for disk drives, where F is the minimum processing feature. From a memory hierarchy perspective, magnetic memories must balance the advantages of nonvolatility with the market demands for performance and low cost, and must address the application shifts away from classical enterprise storage hierarchy to the now rapidly developing mobile storage needs. The success of magnetic memories will depend on their ability to fulfill the evolving memory hierarchy requirements of a large set of new and nontraditional applications and on their ability to approach the device sizes of competing DRAM and flash devices.
机译:作为候选“通用存储器”装置,包括MRAM,旋转扭矩柱塞,电镀线和气泡,包括MRAM,旋转扭矩柱塞,镀线和气泡。这种设备将与磁盘驱动器的非易失性组合DRAM的性能属性。本文从两个视角检查过去和目前的磁存储器:(1)处理和可扩展性到较小的尺寸,(2)它们被引导的应用程序的存储层次结构。从处理要求,磁存储器必须收敛到竞争内存技术的单元格尺寸,该磁盘驱动器的8F〜2为0.5f〜2的范围,其中f是最小处理功能。从内存层次的角度来看,磁存储器必须平衡非易失性的优势与市场对性能和低成本的需求相比,并且必须解决应用程序从古典企业存储层级转移到现在迅速开发的移动存储需求。磁存储器的成功将取决于它们履行大量新型和非传统应用的不断变化的内存层次要求以及实现竞争DRAM和闪存设备的设备大小的能力。

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