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Magnetic memories: Memory hierarchy and processing perspectives (invited)

机译:磁性内存:内存层次结构和处理角度(受邀)

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摘要

A variety of magnetic memory devices, including MRAM, spin-torque RAM, plated wire, and bubbles, either are or have been under investigation as candidate "universal memory" devices. Such devices would combine the performance attributes of DRAM with the nonvolatility of a disk drive. This paper examines the past and present magnetic memories from two perspectives: (1) processing and extendability to smaller dimensions, and (2) the memory hierarchy of the applications to which they are directed. From a processing requirement, magnetic memories must converge to the cell sizes of competitive memory technologies, which range from 8F~2 for DRAM to 0.5F~2 for disk drives, where F is the minimum processing feature. From a memory hierarchy perspective, magnetic memories must balance the advantages of nonvolatility with the market demands for performance and low cost, and must address the application shifts away from classical enterprise storage hierarchy to the now rapidly developing mobile storage needs. The success of magnetic memories will depend on their ability to fulfill the evolving memory hierarchy requirements of a large set of new and nontraditional applications and on their ability to approach the device sizes of competing DRAM and flash devices.
机译:包括MRAM,自旋扭矩RAM,镀线和气泡在内的各种磁存储设备已经或正在研究中,作为候选的“通用存储”设备。这样的设备将结合DRAM的性能属性和磁盘驱动器的非易失性。本文从两个角度研究了过去和现在的磁存储器:(1)处理和扩展到较小尺寸的磁存储器,以及(2)它们所针对的应用程序的存储器层次结构。从处理要求出发,磁存储器必须收敛于竞争性存储技术的单元大小,范围从DRAM的8F〜2到磁盘驱动器的0.5F〜2,其中F是最小处理功能。从存储器层次结构的角度来看,磁存储器必须在非易失性的优势与市场对性能和低成本的需求之间取得平衡,并且必须解决从经典企业存储层次结构到现在快速发展的移动存储需求的应用转变。磁性存储器的成功将取决于它们满足大量新的和非传统应用程序不断发展的存储器层次结构要求的能力,以及其接近竞争DRAM和闪存设备的设备大小的能力。

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