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(07B107) Chemical vapor deposition of polycrystalline Fe_3O_4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor

机译:(07b107)通过使用环己二烯铁三羰基液前体进行多晶Fe_3O_4薄膜的化学气相沉积

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Magnetite (Fe_3O_4) thin films are synthesized by chemical vapor deposition (CVD) with the cyclohexadiene iron tricarbonyl Fe(C_6H_8)(CO)_3 liquid precursor. The growth of pure, polycrystalline, and stoichiometric Fe_3O_4 films is confirmed by X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and conversion electron Mossbauer spectroscopy. At 297 K, the resistivity for 24.8 nm (100 nm) Fe_3O_4 thin film is 17 × 10~(-3) Ωcm (4.2 × 10~(-3) Ωcm), indicating the good electrical quality of the as-deposited layers. Magnetoresistance (MR) up to —2.2% is measured at 297 K at 1.1 T, corresponding to 15% electron spin polarization. A gradual increase of MR is observed at low temperature. In particular, the observed MR = -4.4% at 120 K (at 0.8 T) is attributed to an intrinsic enhancement of the electrons spin polarization up to 21.5%.
机译:通过化学气相沉积(CVD)合成磁铁矿(Fe_3O_4)薄膜,用环己二烯铁三羰基Fe(C_6H_8)(CO)_3液前体合成。通过X射线衍射,拉曼光谱,飞行时间二次离子质谱和转化电子豆类素光谱来证实纯净,多晶和化学计量Fe_3O_4膜的生长。在297 k下,24.8nm(100nm)Fe_3O_4薄膜的电阻率为17×10〜(-3)Ωcm(4.2×10〜(-3)Ωcm),表示沉积层的良好电气质量。高达-2.2%的磁阻(MR)在1.1 T的297K处测量,对应于15%电子自旋极化。在低温下观察MR的逐渐增加。特别地,观察到的MR = -4.4%在120k(0.8吨)归因于电子自旋极化的内在增强,高达21.5%。

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