首页> 外文会议>Annual Conference on Magnetism and Magnetic Materials >(07A324) Fabrication of L1_0-MnAI perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions
【24h】

(07A324) Fabrication of L1_0-MnAI perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

机译:(07A324)用于垂直磁隧道结的L1_0-MNAI垂直磁化薄膜的制造

获取原文

摘要

Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L1_0-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L1_0-ordered structure. The L1_0-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization M_s of 600 emu/cm~3 and perpendicular magnetic anisotropy K_u of 1.0 × 10~7 erg/cm~3 was obtained using the Mn_(48)Al_(52) target at deposition temperature of 200 °C and post-annealing temperature of 450 °C.
机译:研究了具有不同组成,生长温度和退火后温度的Mnal薄膜的结构和磁性。揭示了沉积在Cr缓冲MgO单晶衬底上的L1_0-Mnal垂直磁化薄膜的最佳条件。 X射线衍射结果表明,在适当温度下退火的Mnal膜具有(001) - orientation和L1_0订购的结构。 L1_0订购的薄膜垂直磁化并具有大的垂直各向异性。此外,实现了低表面粗糙度。对于优化的制造条件,使用在沉积温度下使用Mn_(48)Al_(52)靶来获得饱和磁化强度M_S为1.0×10〜7 erg / cm〜3的垂直磁各向异性K_u 200°C和退火温度为450°C。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号